MIG150J202HC 2001-05-29 1 toshiba integrated power module silicon n channel igbt MIG150J202HC high power switching applications motor control applications integrates inverter, brake power circuits & control circuits (igbt drive units, protection units for over-current, under-voltage & over-temperature) in one package. the electrodes are isolated from case. outline : toshiba 2-110a1a weight : 520 g equivalent circuit
MIG150J202HC 2001-05-29 2 maximum ratings (t j = 25c) stage characteristic condition symbol ratings unit supply voltage p-n power terminal v cc 450 v collector-emitter voltage D v ces 600 v collector current tc = 25c, dc i c 150 a forward current tc = 25c, dc i f 150 a collector power dissipation tc = 25c p c 400 w inverter junction temperature D t j 150 c supply voltage p-n power terminal v cc 450 v collector-emitter voltage D v ces 600 v collector current tc = 25c, dc i c 50 a reverse voltage D v r 600 v forward current tc = 25c, dc i f 50 a collector power dissipation tc = 25c p c 120 w brake junction temperature D t j 150 c control supply voltage v d -gnd terminal v d 20 v input voltage in-gnd terminal v in 20 v fault output voltage fo-gnd (l) terminal v fo 20 v control fault output current fo sink current i fo 14 ma operating temperature D tc ? 20 ~ +100 c storage temperature range D t stg ? 40 ~ +125 c isolation voltage ac 1 minute v iso 2500 v module screw torque m5 D 3 nm electrical characteristics (t j = 25c) a. inverter stage characteristic symbol test condition min typ. max unit t j = 25c D D 1 collector cut-off current i cex v ce = 600 v t j = 125c D D 20 ma t j = 25c D 2.5 3.0 collector-emitter saturation voltage v ce (sat) v d = 15 v, i c = 150 a v in = 15 v 0 v t j = 125c D 2.5 D v forward voltage v f i f = 150 a D 2.5 3.5 v t on D 1.2 2.0 t off D 2.0 3.0 t f D 0.25 0.5 switching time t rr v cc = 300 v, i c = 150 a v d = 15 v, v in = 15 v 0 v inductive load (note 1) D 0.1 0.3 s
MIG150J202HC 2001-05-29 3 b. brake stage characteristic symbol test condition min typ. max unit t j = 25c D D 1 collector cut-off current i cex v ce = 600v t j = 125c D D 20 ma t j = 25c D 2.0 3.0 collector-emitter saturation voltage v ce (sat) v d = 15v, i c = 50a v in = 15v 0v t j = 125c D 2.0 D v t j = 25c D D 1 reverse current i r v r = 600v t j = 125c D D 20 ma forward voltage v f i f = 50a D 2.2 2.5 v t on D 1.0 2.0 t off D 2.0 3.0 t f D 0.25 0.5 switching time t rr v cc = 300v, i c = 50a v d = 15v, v in = 15v 0v inductive load (note 1) D 0.15 0.3 s c. control stage (t j = 25c) characteristic symbol test condition min typ. max unit high side i d (h) D 8 D control circuit current low side i d (l) v d = 15 v D 35 D ma input-on signal voltage v in (on) v d = 15 v, i c = 150 ma 1.3 1.5 1.7 v input-off signal voltage v in (off) v d = 15 v, i c = 150 ma 2.2 2.5 2.8 v protection i fo (on) 8 10 12 fault output current normal i fo (off) v d = 15 v D D 1 ma inverter 190 300 D over current protection trip level brake oc v d = 15 v, t j = 125c 60 D D a inverter 285 450 D short current protection trip level brake sc v d = 15 v, t j = 125c 90 D D a over current cut-off time t off (oc) v d = 15 v D 5 D s trip level ot 110 118 125 over temperature protection reset level otr case temperature D 80 D c trip level uv 11.0 12.0 12.5 control supply under voltage protection reset level uvr D D 12.5 D v fault output pulse width t fo v d = 15 v 1 2 3 ms
MIG150J202HC 2001-05-29 4 d. thermal resistance (t j = 25c) characteristic symbol test condition min typ. max unit inverter igbt D D 0.31 inverter frd D D 0.83 brake igbt D D 1.041 junction to case thermal resistance r th (j-c) brake frd D D 2.000 c / w case to fin thermal resistance r th (c-f) compound is applied D 0.05 D c / w note 1: switching time test circuit & timing chart
MIG150J202HC 2001-05-29 5 package dimensions: toshiba 2-110a1a unit: mm
MIG150J202HC 2001-05-29 6 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is sub j ect to chan g e without notice. 000707ea a restrictions on product use
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